Journal
NANOSCALE RESEARCH LETTERS
Volume 7, Issue -, Pages 1-5Publisher
SPRINGER
DOI: 10.1186/1556-276X-7-17
Keywords
process parameters; FTO; thin film; ECR-MOCVD; sheet resistance uniformity
Funding
- National Research Foundation of Korea
- Korean Government (MEST) [NRF-2010-C1AAA001-2010-0028958]
- National Research Council of Science & Technology (NST), Republic of Korea [2E2284] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Lead-free 0.98(Na0.5K0.5)NbO3-0.02Ba(Zr0.52Ti0.48)O-3 [0.98NKN-0.02BZT] ceramics were fabricated by the conventional mixed oxide method with sintering temperature at 1,080A degrees C to 1,120A degrees C. The results indicate that the sintering temperature obviously influences the structural and electrical properties of the sample. For the 0.98NKN-0.02BZT ceramics sintered at 1,080A degrees C to 1,120A degrees C, the bulk density increased with increasing sintering temperature and showed a maximum value at a sintering temperature of 1,090A degrees C. The dielectric constant, piezoelectric constant [d (33)], electromechanical coupling coefficient [k (p)], and remnant polarization [P (r)] increased with increasing sintering temperature, which might be related to the increase in the relative density. However, the samples would be deteriorated when they are sintered above the optimum temperature. High piezoelectric properties of d (33) = 217 pC/N, k (p) = 41%, dielectric constant = 1,951, and ferroelectric properties of P (r) = 10.3 mu C/cm(2) were obtained for the 0.98NKN-0.02BZT ceramics sintered at 1,090A degrees C for 4 h.
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