Journal
NANOSCALE RESEARCH LETTERS
Volume 7, Issue -, Pages 1-6Publisher
SPRINGEROPEN
DOI: 10.1186/1556-276X-7-302
Keywords
Graphene; heterojunction; Schottky diode
Funding
- NSF EPSCOR ASSET II project [EPS-1003970]
- Iraqi government
- Office Of The Director
- EPSCoR [1003970] Funding Source: National Science Foundation
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Here we present a facile technique for the large-scale production of few-layer graphene flakes. The as-sonicated, supernatant, and sediment of the graphene product were respectively sprayed onto different types of silicon wafers. It was found that all devices exhibited current rectification properties, and the supernatant graphene devices have the best performance. Schottky junctions formed between graphene flakes and silicon n-type substrates exhibit good photovoltaic conversion efficiency while graphene/p-Si devices have poor light harvesting capability.
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