Journal
NANOSCALE RESEARCH LETTERS
Volume 7, Issue -, Pages -Publisher
SPRINGER
DOI: 10.1186/1556-276X-7-558
Keywords
GaAs nanowire; Molecular beam epitaxy; Vapor-liquid-solid; Twin boundary; Supersaturation; Wurtzite; zinc blende
Funding
- Japan Society for the Promotion of Science (JSPS) [23510148]
- Tatematsu Foundation
- Grants-in-Aid for Scientific Research [23510148] Funding Source: KAKEN
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We attempted to control the incorporation of twin boundaries in self-catalyzed GaAs nanowires (NWs). Self-catalyzed GaAs NWs were grown on a Si substrate under various arsenic pressures using molecular beam epitaxy and the vapor-liquid-solid method. When the arsenic flux is low, wurtzite structures are dominant in the GaAs NWs. On the other hand, zinc blende structures become dominant as the arsenic flux rises. We discussed this phenomenon on the basis of thermodynamics and examined the probability of twin-boundary formation in detail.
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