Crystallographic plane-orientation dependent atomic force microscopy-based local oxidation of silicon carbide

The effect of crystalline plane orientations of Silicon carbide (SiC) (a-, m-, and c-planes) on the local oxidation on 4H-SiC using atomic force microscopy (AFM) was investigated. It has been found that the AFM-based local oxidation (AFM-LO) rate on SiC is closely correlated to the atomic planar density values of different crystalline planes (a-plane, 7.45 cm(-2); c-plane, 12.17 cm(-2); and m-plane, 6.44 cm(-2)). Specifically, at room temperature and under about 40% humidity with a scan speed of 0.5 mu m/s, the height of oxides on a-and m-planes 4H-SiC is 6.5 and 13 nm, respectively, whereas the height of oxides on the c-plane increased up to 30 nm. In addition, the results of AFM-LO with thermally grown oxides on the different plane orientations in SiC are compared.