On-Chip Asymmetric Microsupercapacitors Combining Reduced Graphene Oxide and Manganese Oxide for High Energy-Power Tradeoff

Given the rapid miniaturization of technology, it is of interest to produce viable on-chip micro-electrochemical energy storage systems. In this study, interdigitated asymmetric microsupercapacitors were fabricated using photolithography, lift-off and electrodeposition methods. Manganese oxide (MnOx) and reduced graphene oxide (rGO) comprised the pseudocapacitive and the double layer component, respectively. Symmetric MnOx//MnOx, rGO//rGO as well as asymmetric rGO//MnOx microsupercapacitors with three different MnOx thicknesses were constructed and characterized in aqueous media. The asymmetric microsupercapacitor with the intermediate MnOx film thickness displayed the optimal energy-power trade-off superior to that of both the symmetric and well as the other asymmetric configurations. The optimal microsupercapacitor exhibited a high stack energy density of 1.02 mWh cm(-3) and a maximal power density of 3.44 Wcm(-3). The high energy-power trade-off of the device is attributed to the synergistic effects of utilizing double layer and pseudocapacitive charge storage mechanisms along with in-plane interdigital microelectrode design within one optimized micro-device.