Journal
MICROMACHINES
Volume 9, Issue 8, Pages -Publisher
MDPI
DOI: 10.3390/mi9080377
Keywords
optical band gap; tungsten trioxide film; annealing temperature; electrochromism
Categories
Funding
- National Natural Science Foundation of China [51771074, 51521002, U1601651]
- National Key R&D Program of China [2016YFB0401504, 2016YFF0203600]
- National Key Basic Research and Development Program of China (973 program) [2015CB655004]
- Guangdong Natural Science Foundation [2016A030313459, 2017A030310028]
- Guangdong Science and Technology Project [2016B090907001, 2016A040403037, 2016B090906002, 2017B090907016, 2017A050503002]
- Guangzhou Science and Technology Project [201804020033]
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Tungsten trioxide (WO3) is a wide band gap semiconductor material that is used as an important electrochromic layer in electrochromic devices. In this work, the effects of the annealing temperature on the optical band gap of sol-gel WO3 films were investigated. X-ray Diffraction (XRD) showed that WO3 films were amorphous after being annealed at 100 degrees C, 200 degrees C and 300 degrees C, respectively, but became crystallized at 400 degrees C and 500 degrees C. An atomic force microscope (AFM) showed that the crystalline WO3 films were rougher than the amorphous WO3 films (annealed at 200 degrees C and 300 degrees C). An ultraviolet spectrophotometer showed that the optical band gap of the WO3 films decreased from 3.62 eV to 3.30 eV with the increase in the annealing temperature. When the Li+ was injected into WO3 film in the electrochromic reaction, the optical band gap of the WO3 films decreased. The correlation between the optical band gap and the electrical properties of the WO3 films was found in the electrochromic test by analyzing the change in the response time and the current density. The decrease in the optical band gap demonstrates that the conductivity increases with the corresponding increase in the annealing temperature.
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