Journal
JOURNAL OF MATERIALS CHEMISTRY C
Volume 6, Issue 36, Pages 9649-9659Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c8tc02447b
Keywords
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Funding
- Russian Foundation for Basic Research [16-29-05321, 17-03-00222]
- [NSh-5698.2018.3]
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Monolayer organic field effect transistors (OFETs) provide opportunity for ultrahigh sensitivity gas sensor applications due to a strong dependence of OFET key parameters on the environment. However, an impressive combination of both high sensitivity and instantaneous response of such gas sensors can be achieved only on low-defect dense monolayers with high electrical performance. Herein, we investigated monolayer thin film formation of recently developed benzothieno[3,2-b][1] benzothiophene (BTBT) organosilicon dimer D2-Und-BTBT-Hex by Langmuir-Blodgett, Langmuir-Schaefer and spin-coating methods. For all these techniques, the conditions of uniform low-defect monolayer formation were found. These monolayers were used for preparation of OFET devices, which demonstrated excellent electrical performance with a hole mobility up to 7 x 10(-2) cm(2) V-1 s(-1), a threshold voltage around 0 V and an on-off ratio of 105 as well as long-term stability of half-year storage under ambient conditions. Preliminary investigations demonstrated that the monolayer OFETs give an instantaneous response to ammonia at low concentrations (down to 400 ppb). These findings show a great potential of BTBT-based OFETs for large-area sensing device application.
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