Journal
JOURNAL OF MATERIALS CHEMISTRY C
Volume 2, Issue 17, Pages 3254-3259Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c3tc31899k
Keywords
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Funding
- National Natural Science Foundation of China (NSFC) [61172001, 21373068]
- National Key Basic Research Program of China (973 Program) [2013CB632900]
- Scientific Research Foundation for the Returned Overseas Chinese Scholars [JJ20110033]
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Two-dimensional (2D) semiconductors are limited to graphene analogues of layered materials, so it is extremely challenging to fabricate 2D non-layered materials with thicknesses of only a few atomic layers. Here, we report the successful fabrication of 2D Ga2O3 from the corresponding GaSe nanosheets and a solar blind photodetector based on 2D Ga2O3. The as-prepared 2D beta-Ga2O3 is polycrystalline and has a thickness of less than 10 nm. Furthermore, we demonstrate a photodetector based on 2D beta-Ga2O3, which show a sensitive, fast and stable photoresponse to ultraviolet radiation (254 nm). The responsivity, detectivity and external quantum efficiency of the photodetector are 3.3 A W-1, 4.0 x 10(12) Jones and 1600%, respectively, indicating that the 2D Ga2O3 has great potential for application for solar-blind photodetectors.
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