4.6 Article

High performance ambipolar organic field-effect transistors based on indigo derivatives

Journal

JOURNAL OF MATERIALS CHEMISTRY C
Volume 2, Issue 43, Pages 9311-9317

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/c4tc01563k

Keywords

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Funding

  1. Ministry of Education, Culture, Sports, Science, and Technology of Japan [23350061]
  2. Grants-in-Aid for Scientific Research [23350061, 13J02780] Funding Source: KAKEN

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A bio-inspired organic semiconductor 5,5'-diphenylindigo shows excellent and well-balanced ambipolar transistor properties; its hole and electron mobilities are 0.56 and 0.95 cm(2) V-1 s(-1), respectively. The enhanced performance is attributed to the extended pi-pi overlap of the phenyl groups as well as the characteristic packing pattern that is a hybrid of the herringbone and brickwork structures. The ambipolar transistor characteristics are analyzed considering its operating regions, where a large unipolar saturated region appears due to the difference of the electron and hole threshold voltages.

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