Journal
JOURNAL OF MATERIALS CHEMISTRY C
Volume 2, Issue 6, Pages 965-980Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c3tc31998a
Keywords
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Funding
- Ministry of Education, Culture, Sports, Science and Technology, Japan [15350115, 22350082, 17067009, 24655173, 25000003]
- JST through the SICORP project (LEMSUPER)
- JSPS through the 'Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program)'
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Growth and characterisation of single crystals constitute a major field of materials science. In this feature article we overview the characteristics of organic single-crystal light-emitting field-effect transistors (OSCLEFETs). The contents include the single crystal growth of organic semiconductors and their application to transistor devices. First, we describe various single crystal growth methods that produce different morphologies and geometries of crystals. Using these single crystals we highlight construction and performance of the devices. The single crystal approach not only allows us to study the device performance that reflects the intrinsic nature of the organic semiconductors but also is advantageous to enhancement in the steady device operation. A current-injected laser oscillation in an electronic device configuration remains as a big challenge to be achieved. In this context we briefly mention the spectrally narrowed emissions as well as the possibility of light amplification in the OSCLEFETs.
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