Journal
JOURNAL OF MATERIALS CHEMISTRY C
Volume 2, Issue 6, Pages 1158-1164Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c3tc31850h
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Funding
- DST, India
- CSIR, India
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We report on the rectification properties from a single ZnS nanorod measured using the UHV-SPM technique. The rectification behavior is evidenced from the current-voltage characteristics measured on a single ZnS nanorod. We propose a tunneling mechanism where the direct tunneling mechanism is dominant at lower applied bias voltages followed by resonant tunneling through discrete energy levels of the nanorod. A further increase in the bias voltage changes the tunneling mechanism to the Fowler-Nordheim tunneling regime enabling rectification behavior. Realizing rectification from a single ZnS nanorod may provide a means of realizing a single nanorod based miniaturized device.
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