Journal
JOURNAL OF MATERIALS CHEMISTRY C
Volume 2, Issue 38, Pages 8023-8028Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c4tc01673d
Keywords
-
Funding
- Nanomaterial Technology Development Program through the NRF of Korea [2012M3A7B4034985]
- Brain Korea 21 Plus Program
- National Research Foundation of Korea [21A20131100006] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Ask authors/readers for more resources
We demonstrate an inverter type nanodevice based on 2-dimensional semiconducting molybdenum disulfide (MoS2) nanoflakes. The inverter device was comprised of back-gate and top-gate field-effect transistors (FETs) which work respectively as a load and a driver for a logic inverter in the dark but switch their roles for photo-inverter operation. Our logic inverter shows a relatively high voltage gain of more than 12. When the back-gate FET controls the circuit as a driver to sensitively detect visible light using its open channel, the device effectively operates as a photo-inverter detecting visible photons. Our inverter based on top- and back-gate MoS2 FETs would be quite promising for both logic and photo-sensing applications due to its performance and simple device configuration as well.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available