Journal
JOURNAL OF MATERIALS CHEMISTRY C
Volume 2, Issue 36, Pages 7570-7574Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c4tc00849a
Keywords
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Funding
- Natural Science Foundation of China [90923001, 51332003]
- International Science AMP
- Technology Cooperation Program of China [2010DFB13640, 2011DFA51880]
- Changjiang Scholar Program
- 'Qianren Program' of the Chinese Government
- Natural Science and Engineering Research Council of Canada (NSERC)
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Graphene has attracted a great deal of research interest owing to its unique properties and many potential applications. Chemical vapor deposition has shown some potential for the growth of large-scale and uniform graphene films; however, a high temperature (over 800 degrees C) is usually required for such growth. A whole new method for the synthesis of graphene at low temperatures by means of remote plasma-enhanced atomic layer deposition is developed in this work. Liquid benzene was used as a carbon source. Large graphene sheets with excellent quality were prepared at a growth temperature as low as 400 degrees C. The atomic structure of the graphene was characterized by means of aberration-corrected transmission electron microscopy. Hexagonal carbon rings and carbon atoms were observed, indicating a highly crystalline structure of the graphene. These results point to a new technique for the growth of high-quality graphene for potential device applications.
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