Journal
JOURNAL OF MATERIALS CHEMISTRY C
Volume 1, Issue 27, Pages 4275-4282Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c3tc30550c
Keywords
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Funding
- National Research Foundation of Korea (NRF)
- Korean government (MEST) [2012R1A3A2026417]
- Brain Korea 21 Project
- National Research Council of Science & Technology (NST), Republic of Korea [KK-1302-C0, KK-1302] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2012R1A3A2026417] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Although high dielectric constant (k) oxide thin film has been considered as a key element for high performance and low-voltage driven thin-film transistors (TFTs), there are no solution processable high-k oxide dielectrics that satisfy the stringent requirements of low-temperature processability, mechanical flexibility, and good TFT performance. Here, we demonstrate that the incorporation of a zirconium component that has strong bonding to oxygen enables a significant reduction in the processing temperature for soluble alumina dielectrics to as low as 250 degrees C. Based on these Zr-AlOx films, high performance, low operational voltage, flexible TFTs are achieved. Flexible TFTs operate well under a gate bias of 5 V, exhibiting a high saturation mobility of 51 cm(2) V-1 s(-1), an on/off current ratio of 104, and a low threshold voltage of 1.2 V with good mechanical flexibility. This is the first study demonstrating the mechanical flexibility of all-oxide soluble high-k dielectric-semiconductor-based TFTs with an emphasis on the influence of annealing temperature on the solution-deposited high-k oxide dielectric characteristics.
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