Journal
JOURNAL OF MATERIALS CHEMISTRY C
Volume 1, Issue 9, Pages 1840-1845Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c2tc00405d
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Funding
- WCU (World Class University) program through the National Research Foundation of Korea
- Ministry of Education, Science and Technology [R32-20031]
- LG Display academic industrial cooperation program
- MKE, KIAT through the Inter-ER cooperation projects
- National Research Foundation of Korea [R32-2012-000-20031-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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The fabrication of fully transparent thin-film transistor (TFT) arrays composed of metal oxides and SWCNTs was performed on a glass substrate through simple all-solution-processed, vacuum-free routes followed by thermal annealing treatments at 350 degrees C which is the lowest processing temperature reported to date. We adopted fluorine-doped indium tin oxide (ITO:F), stacked zirconium oxide/aluminium oxide/zirconium oxide (ZAZ), indium zinc oxide (IZO), and single-walled carbon nanotubes (SWCNTs) for gate electrodes, gate insulators, channel layers, and source/drain electrodes, respectively, which enabled the fabrication of TFT with desired-performance at a sufficiently low annealing temperature of 350 degrees C that is compatible with polymer substrates. The TFT fabricated with a back-gated SWCNT/IZO/ZAZ/ITO:F structure was highly transparent with a transmittance of 76.5% in the visible range and exhibited a mobility of 0.45 cm(2) V-1 s(-1) and an on/off current ratio of similar to 10(6), which are comparable to those of hydrogenated amorphous silicon TFTs. These results suggest that all-solution-processed TFTs have the potential for lost-cost, fully transparent, flexible device applications.
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