Improved thermoelectric performance of hot pressed nanostructured n-type SiGe bulk alloys

Silicon germanium alloys (Si80Ge20) have been used in thermoelectric generators for deep space missions to convert radioisotope heat into electricity. This work demonstrates the highest value of thermoelectric figure-of-merit (ZT) similar to 1.84 at 1073 K for n-type SiGe nanostructured bulk alloys, which is 34% higher than the reported record value for n-type SiGe alloys. The optimized samples exhibit a Seebeck coefficient of similar to 284 mV K-1, resistivity of similar to 45 mu Omega m and thermal conductivity of similar to 0.93 W m(-1) K-1 at 1073 K. The main contributing factor for the enhanced ZT is very low and almost temperature independent thermal conductivity, which overcomes the low power factor of the material. Significant reduction of the thermal conductivity is caused by the scattering of low, medium and high wavelength phonons by atomic size defects, dislocations, and grain boundaries that are present due to the formation of nanocrystalline grains in the bulk material.