Journal
JOURNAL OF MATERIALS CHEMISTRY A
Volume 2, Issue 9, Pages 2928-2933Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c3ta14443g
Keywords
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Funding
- Basic Science Research Program through the National Research Foundation of Korea (NRF)
- Ministry of Science, ICT and Future Planning [NRF-2013R1A1A1008762]
- Human Resources Development Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) [20124030200130]
- Korean Government Ministry of Trade, Industry and Energy
- Korea Evaluation Institute of Industrial Technology (KEIT) [20124030200130] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [22A20130012456] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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The long-term steady production of H-2 is vital for p-Si photocathodes. However, the oxidation of a Si photoelectrode substantially deteriorates its performance, over time. This study demonstrates that a thin Al2O3 layer deposited over the Si can prevent oxidation and also reduce overpotential, via a surface passivation effect.
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