Journal
JOURNAL OF MATERIALS CHEMISTRY A
Volume 1, Issue 30, Pages 8567-8574Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c3ta11384a
Keywords
-
Funding
- National Basic Research Program of China [2012CB932400, 2013CB933500]
- National Natural Science Foundation of China [91233110, 91027021, 51172151, 51173124, 50903059]
- Research Grants Council of the Hong Kong Special Administrative Region, China [CityU 101909]
- Priority Academic Program Development of Jiangsu Higher Education
Ask authors/readers for more resources
Graphene-Si Schottky junction solar cells are promising candidates for high-efficiency, low-cost photovoltaic applications. However, their performance enhancement is restricted by strong carrier recombination and relative low barrier height. Here, we demonstrated the successful construction of high-efficiency graphene-planar Si solar cells via modification of the Si surface with a molecule monolayer as well as tuning the interface band alignment with an organic electron blocking layer. Methylated Si showed the capability to effectively suppress the surface carrier recombination, leading to a remarkable improvement of device efficiency. The recombination was further reduced by inserting a thin P3HT organic layer; the unique band alignment could prevent electron transfer from n-Si to the graphene anode so as to minimize the current leakage. These methods, along with careful control of the graphene doping level and layer number, gave rise to a power conversion efficiency (PCE) as high as 10.56%. The scalability of the devices was further investigated by studying the device area dependent photovoltaic performance.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available