Journal
JOURNAL OF MATERIALS CHEMISTRY A
Volume 1, Issue 48, Pages 15348-15354Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c3ta13750c
Keywords
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Funding
- National Basic Research Program of China [2012CB932400, 2013CB933500]
- Major Research Plan of the National Natural Science Foundation of China [91233110, 91027021]
- National Natural Science Foundation of China [51172151, 51173124]
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Graphene/Si hole array (SiHA) Schottky junctions show great promise as high-efficiency, cost-effective solar cells. However, their applications are still limited by the severe surface recombination of the nano-hole SiHA and inferior device stability arising from volatile oxidant doping. Here, we demonstrate the construction of high-efficiency graphene/SiHA devices with enhanced device performance and stability. The micro-hole SiHA fabricated by photolithography and reaction ion etching (RIE) possesses a smooth surface, thus ensuring a low surface recombination velocity. Also, the light harvesting of the micro-hole SiHA could be readily tuned by adjusting the hole depth. Introduction of the micro-hole SiHA, along with the use of AuCl3 for graphene doping, gives rise to a high power conversion efficiency (PCE) of 10.40% for the graphene/SiHA devices. Additionally, the device stability is substantially improved and shows a relatively low degradation ratio after storing in air for 3 months. It is expected that the graphene/SiHA devices will have important applications in new-generation Si solar cells.
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