Journal
JOURNAL OF MATERIALS CHEMISTRY A
Volume 1, Issue 48, Pages 15416-15422Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c3ta13208k
Keywords
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Funding
- NSF CAREER [ECCS-1150878]
- NSF [CBET-1032955, DMR-0819762, ECS-0335765]
- Bosch through the MIT Energy Initiative
- Chesonis Family Foundation
- NRF Singapore
- Div Of Electrical, Commun & Cyber Sys [1150878] Funding Source: National Science Foundation
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We demonstrate the potential of a nitrogen-doped cuprous oxide (Cu2O:N) film as a p-type hole-transporting layer for photovoltaic devices. To reduce back-contact resistance and create an electron-reflecting back surface field, high carrier density and appropriate work function are desired for the layer. Its electrical and optical properties can be appropriately tuned via nitrogen-doping to create a semi-transparent tunnel junction to a back-contact. We fabricate Cu2O-based heterojunction thin-film solar cells and insert a 20 nm-thick Cu2O:N hole-transporting layer between a silver back-contact and a Cu2O light-absorbing layer. The insertion of a 20 nm-thick Cu2O: N layer results in sizeable enhancements of fill-factor and power conversion efficiency of the solar cells. Cu2O:N thin-films may also be useful in other photovoltaic material systems, improving their back-contact properties as well as widening the range of possible back-contact materials.
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