4.6 Article

Direct growth of mesoporous Sn-doped TiO2 thin films on conducting substrates for lithium-ion battery anodes

Journal

JOURNAL OF MATERIALS CHEMISTRY A
Volume 1, Issue 42, Pages 13222-13226

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/c3ta13198j

Keywords

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Funding

  1. National Key Basic Research Program of China [2013CB934104]
  2. NSF of China [21322311]
  3. Program for New Century Excellent Talents in University [NCET-10-0357]
  4. Shanghai Pujiang Program [10PJ1401000]
  5. Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning

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We demonstrate the controlled doping of Sn into mesoporous TiO2 thin films, by a facile direct growth on conducting substrates (e. g. Ti) using the ligand-assisted evaporation-induced self-assembly method. The obtained Sn-doped mesoporous TiO2 thin films are polycrystalline with an anatase structure. The mesoporous TiO2 frameworks provide efficient ion transport pathways and structural stability for Li+ insertion. The in situ incorporation of Sn dopants into the mesoporous frameworks improves the charge transfer efficiency and the theoretical Li+ storage capacity of the electrode. In addition, the obtained mesoporous structures on Ti substrates provide close contact between the active material and the current collector, thus reducing the contact resistance and enhancing the charge transfer. As proof-of-concept, lithium-ion battery measurements of the Sn-doped mesoporous TiO2 thin film anodes with different Sn doping ratios show that the specific reversible capacity increases to a maximum with similar to 6% Sn doping ratio (similar to 252.5 mA h g(-1) at 0.5 C) compared to our best pristine mesoporous TiO2 thin film anodes (100.8 mA h g(-1) at 0.5 C), and then decreases at higher Sn doping ratios. Moreover, the Sn-doped mesoporous TiO2 thin films exhibit an excellent cycling stability, thus suggesting a potential approach for fabricating mesoporous oxide thin films with controlled doping for stable LIB storage.

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