4.5 Article

Flexible Thin-Film Tandem Solar Cells With >30% Efficiency

Journal

IEEE JOURNAL OF PHOTOVOLTAICS
Volume 4, Issue 2, Pages 729-733

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2014.2299395

Keywords

Epitaxial layers; gallium arsenide; indium compounds; photovoltaic cells; solar energy; thin films; thin-film devices; III-V semiconductor materials

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Alta Devices, Inc. has previously reported on singlejunction thin-film GaAs photovoltaic devices on flexible substrates with efficiencies up to 28.8% under AM1.5G solar illumination at 1-sun intensity. Here, we show that the same technology platform can be extended to tandem devices that are capable of even higher efficiencies: so far up to 30.8%. Specifically, here, we report on a lattice-matched, series-connected, two-junction device with InGaP as the light-absorbing material of the top cell and GaAs as the absorber in the bottom cell. The material is grown by metallorganic chemical vapor deposition, and then, the device is lifted off by the epitaxial liftoff (ELO) process, as previously reported. This demonstrates that ELO is not only capable of record-setting single-junction performance but capable of achieving world-class efficiency with a multijunction architecture as well.

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