Journal
IEEE JOURNAL OF PHOTOVOLTAICS
Volume 4, Issue 1, Pages 96-99Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2013.2282737
Keywords
Amorphous materials; heterojunction; photovoltaic (PV) cells; silicon; surface passivation
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A new record conversion efficiency of 24.7% was attained at the research level by using a heterojunction with intrinsic thin-layer structure of practical size (101.8 cm(2), total area) at a 98-mu m thickness. This is a world height record for any crystalline silicon-based solar cell of practical size (100 cm(2) and above). Since we announced our former record of 23.7%, we have continued to reduce recombination losses at the hetero interface between a-Si and c-Si along with cutting down resistive losses by improving the silver paste with lower resistivity and optimization of the thicknesses in a-Si layers. Using a new technology that enables the formation of a-Si layer of even higher quality on the c-Si substrate, while limiting damage to the surface of the substrate, the V-oc has been improved from 0.745 to 0.750 V. We also succeeded in improving the fill factor from 0.809 to 0.832.
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