Journal
IEEE JOURNAL OF PHOTOVOLTAICS
Volume 3, Issue 1, Pages 90-94Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2012.2210031
Keywords
Aluminum oxide; atomic layer deposition (ALD); black silicon (b-Si); nanostructures
Funding
- Graduate School of the Faculty of Electronics, Communications and Automation
- Academy of Finland [138674]
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The poor charge-carrier transport properties attributed to nanostructured surfaces have been so far more detrimental for final device operation than the gain obtained from the reduced reflectance. Here, we demonstrate results that simultaneously show a huge improvement in the light absorption and in the surface passivation by applying atomic layer coating on highly absorbing silicon nanostructures. The results advance the development of photovoltaic applications, including high-efficiency solar cells or any devices, that require high-sensitivity light response.
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