4.5 Article

Impacts of Post-Treatments on Cell Performance of CIGS Solar Cells With Zn-Compound Buffer Layers

Journal

IEEE JOURNAL OF PHOTOVOLTAICS
Volume 3, Issue 1, Pages 461-466

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2012.2223456

Keywords

Air-annealing; ammonia rinsing; Cu(In,Ga)Se-2 CIGS solar cell; heat light soaking (HLS); light soaking (LS); ZnS(O,OH) buffer layer

Ask authors/readers for more resources

The postdeposition treatments, such as ammonia rinsing, light soaking, and heat light soaking on cell performances of Cu(In,Ga)Se-2 (CIGS) solar cells with Zn-compound buffer layers, are investigated. The impacts of these treatments are discussed in connection with the band alignment at the transparent conducting oxide (TCO)/buffer/CIGS interface. Three types of CIGS solar cells with sputter-deposited ZnO:Al/CBD-ZnS(O,OH), MOCVD-ZnO:B/CBD-ZnS(O,OH), and MOCVD-ZnO:B/ALD-Zn(O,S) are investigated in this paper. The importance of the combination of buffer/TCO materials and deposition processes is discussed. We demonstrate that the adjustment of an S/(S+O) atomic ratio relevant to the band alignment at the buffer/CIGS interface is critical to achieve high-efficiency CIGS solar cells with Zn-compound buffer layer.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.5
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available