Large-Area Compositional Mapping of Cu(In1-xGax)Se2 Materials and Devices with Spectroscopic Ellipsometry

A spectroscopic ellipsometry (SE) capability having the potential to scan production-scale areas at high speed has been developed and successfully applied tomap the alloy composition of copper-indium-gallium-diselenide (CuIn1-xGaxSe2:CIGS) thin films. This technique not only generates a compositional map but simultaneously provides maps of the more typical SE-determined properties as well, including bulk layer and surface roughness layer thicknesses. As a result, the methodology is suitable for characterization in online production-scale applications. In order to develop the mapping capability, CIGS films having different molar Ga contents x and fixed copper stoichiometry were deposited and measured in situ by SE in order to extract the complex dielectric functions (epsilon = epsilon(1)+ i epsilon(2)) of these films. For mathematical interpolation between the available alloy contents, the (epsilon(1), epsilon(2)) spectra were parameterized using an oscillator sum. Best-fitting equations were obtained that relate each oscillator parameter to the Ga content x, as determined by energy dispersive X-ray analysis. This approach reduces the number of fitting parameters for (epsilon(1), epsilon(2)) from several to just one: the Ga content x. Because (epsilon(1), epsilon(2)) is now represented by this single parameter, the chances of parameter correlations during fitting are reduced, enabling production-scale compositional mapping of chalcopyrite films by SE.