Journal
IEEE JOURNAL OF PHOTOVOLTAICS
Volume 3, Issue 1, Pages 439-445Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2012.2215842
Keywords
Cu2ZnSnS4 (CZTS); earth; kesterite; photovoltaic; thin film
Funding
- Alliance for Sustainable Energy, LLC [DE-AC36-08GO28308]
- U.S. Department of Energy
- California NanoSystem Institute
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Recent years have seen dramatic improvements in the performance of kesterite devices. The existence of devices of comparable performance, made by a number of different techniques, provides some new perspective on what characteristics are likely fundamental to the material. Here, we review progress in kesterite device fabrication, aspects of the film characteristics that have yet to be understood, and challenges in device development that remain for kesterites to contribute significantly to photovoltaic manufacturing. Performance goals, as well as characteristics of mid-gap defect density, free carrier density, surfaces, grain boundaries, grain-to-grain uniformity, and bandgap alloying are discussed.
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