Journal
IEEE JOURNAL OF PHOTOVOLTAICS
Volume 3, Issue 3, Pages 962-969Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2013.2259894
Keywords
Bricks; carrier lifetime; imaging; ingot; photoluminescence; silicon; spectroscopy
Funding
- Australian Renewable Energy Agency
- Australian Research Council
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Bulk lifetime and doping images on silicon bricks can be obtained by spectral luminescence intensity ratio analysis as established recently. Here, we report on calibrated full spectrum band-to-band luminescence measurements taken on the flat side faces of mono-and multicrystalline silicon bricks at room temperature. Our results verify the physical modeling used for the spectral intensity ratio imaging. We further investigate three fitting methods employing spectrally resolved photoluminescence data to obtain bulk lifetime information.
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