Journal
APL MATERIALS
Volume 3, Issue 4, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4916525
Keywords
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Funding
- Rutherford Foundation of New Zealand
- Cambridge Commonwealth Trust
- ERC Advanced Investigator Grant, Novox [ERC-2009-adG247276]
- Marie Curie Actions (FP7) [219332, 631111]
- Ramon y Cajal programme from the Spanish MICINN
- European Social Fund
- Comissionat per a Universitats I Recerca (CUR) del DIUE de la Generalitat de Catalunya, Spain
- European Trust
- International Trust
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Atmospheric pressure spatial atomic layer deposition (AP-SALD) has recently emerged as an appealing technique for rapidly producing high quality oxides. Here, we focus on the use of AP-SALD to deposit functional ZnO thin films, particularly on the reactors used, the film properties, and the dopants that have been studied. We highlight how these films are advantageous for the performance of solar cells, organometal halide perovskite light emitting diodes, and thin-film transistors. Future AP-SALD technology will enable the commercial processing of thin films over large areas on a sheet-to-sheet and roll-to-roll basis, with new reactor designs emerging for flexible plastic and paper electronics. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
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