Journal
ECS SOLID STATE LETTERS
Volume 3, Issue 9, Pages P111-P113Publisher
ELECTROCHEMICAL SOC INC
DOI: 10.1149/2.0081409ssl
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Funding
- National Natural Science Foundation of China [61307079, 61223005, 60906035]
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Crystalline Ge1-xSnx films were successfully grown on Si (100) substrates by low-temperature magnetron sputtering, using a Ge thin film as a buffer layer. The resulting films were revealed to have a high crystalline quality by X-ray diffraction and transmission electron microscopy. The thermal stability of these films was also studied in detail, demonstrating that sputtered films with a Sn composition 0.06 are stable at 500 degrees C. On the basis of these results, Ge1-xSnx films grown by sputtering appear to have great promise for the cost-effective fabrication of Si-based infrared devices. (C) 2014 The Electrochemical Society. All rights reserved.
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