Journal
ECS SOLID STATE LETTERS
Volume 2, Issue 5, Pages Q35-Q38Publisher
ELECTROCHEMICAL SOC INC
DOI: 10.1149/2.006305ssl
Keywords
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Funding
- Singapore Agency for Science, Technology and Research (A*STAR) [092 151 0088]
- National Natural Science Foundation of China (NSFC) [61006037, 61177014, 61076015]
- Tianjin Natural Science Foundation [11JCZDJC21900, 11JCYDJC25800]
- Japan Society for the Promotion of Science (JSPS)
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A self-rectifying unipolar RRAM based on HfOx dielectrics using highly doped n-type germanium substrate as the bottom electrode is proposed for the first time. The RRAM cells exhibit a stable unipolar resistive switching behavior. Owning to Schottky barrier between defect states in HfOx layer and n-Ge substrate, RRAM cells possess a self-rectifying behavior in LRS which eliminates the read-out errors induced by leakage current paths in cross-bar array structure. The demonstrated RRAM device shows high ON/OFF ratio (>5 x 10(2) @ 0.5 V), and its effective Schottky barrier height is also addressed. The demonstrated HfOx-based RRAM devices provide a promising candidate as non-volatile memory devices using Ge-based technology. (C) 2013 The Electrochemical Society. All rights reserved.
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