Journal
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
Volume 2, Issue 4, Pages P138-P145Publisher
ELECTROCHEMICAL SOC INC
DOI: 10.1149/2.013304jss
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Funding
- National Research Foundation [NRF-RF2008-09]
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We report the first realization of fully-released and relaxed Ge1-xSnx structures on Ge substrate. The coefficients of Raman peak shift a and b due to the alloy disorder and strain, respectively, were experimentally obtained for Ge1-xSnx. In addition, to lower the Sn composition needed to achieve direct bandgap Ge1-xSnx alloys and also to realize channel materials with higher electron mobility, uniaxially tensile strained Ge1-xSnx patterns were fabricated. Large tensile strain (>1%) was detected in the patterned Ge1-xSnx lines. Such tensile-strained Ge1-xSnx structures could enable the realization of Group-IV optoelectronic devices and high mobility n-channel transistors. (C) 2013 The Electrochemical Society. All rights reserved.
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