Journal
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
Volume 2, Issue 4, Pages Q51-Q58Publisher
ELECTROCHEMICAL SOC INC
DOI: 10.1149/2.016304jss
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Funding
- BMBF federal project [03 SF 0353A-E]
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Homoepitaxial p-InP(100) thin films prepared by MOVPE (metallorganic vapor phase epitaxy) were transformed into an InP/oxidephosphate/Rh heterostructure by photoelectrochemical conditioning. Surface sensitive synchrotron radiation photoelectron spectroscopy indicates the formation of a mixed oxide constituted by In(PO3)(3), InPO4 and In2O3 as nominal components during photo-electrochemical activation. The operation of these films as hydrogen evolving photocathode proved a light-to-chemical energy conversion efficiency of 14.5%. Surface activation arises from a shift of the semiconductor electron affinity by 0.44 eV by formation of In-Cl interfacial dipoles with a density of about 10(12) cm(-2). Predominant local In2O3-like structures in the oxide introduce resonance states near the semiconductor conduction band edge imparting electron conductivity to the phosphate matrix. Surface reflectance investigations indicate an enhanced light-coupling in the layered architecture. (C) 2013 The Electrochemical Society. All rights reserved.
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