Journal
ADVANCED ELECTRONIC MATERIALS
Volume 1, Issue 11, Pages -Publisher
WILEY
DOI: 10.1002/aelm.201500232
Keywords
-
Funding
- Korea Institute of Energy Technology Evaluation and Planning
- Ministry of Knowledge Economy [KETEP-20133030011000]
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A high-performing UV photodetector that uses large energy bandgap materials of p-type NiO and n-type ZnO without an opaque metal electrode is reported. A quality heterojunction is formed by large-area applicable sputtering deposition method that has an extremely low saturation current density of 0.1 mu A cm(-2). This abrupt p-NiO/n-ZnO heterojunction device is visible-light transparent and shows the fastest photoresponse time of 24 ms among NiO-based UV photodetectors, along with the highest responsivity (3.85 A W-1) and excellent detectivity (9.6 x 10(13) Jones) properties. Structural, physical, optical, and electrical properties of nanocrystalline NiO are systematically investigated. Mott-Schottky analyses are applied to develop the interface of NiO and ZnO by establishing energy diagrams. Defects existing inside the nanocrystalline NiO film enhance the UV detection performance by defect-assisted carrier transportation. The results provide a solid scheme of manipulation of NiO defects for functional photoelectric device applications.
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