Journal
ADVANCED ELECTRONIC MATERIALS
Volume 1, Issue 5, Pages -Publisher
WILEY
DOI: 10.1002/aelm.201500052
Keywords
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Funding
- Hong Kong Polytechnic University [A-PL54, G-UC69, 1-ZVCG]
- National Natural Science Foundation of China [51402196, 51272161, 51172187]
- China Postdoctoral Science Foundation [2014M552229]
- Shenzhen Science and Technology Research Foundation [CXB201005240010A]
- 111 Program of MOE [B08040]
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Ferroelectrics/antiferroelectrics with high dielectric breakdown strength have the potential to store a great amount of electrical energy, attractive for many modern applications in electronic devices and systems. Here, it is demonstrated that a giant electric energy density (154 J cm(-3), three times the highest value of lead-based systems and five times the value of the best dielectric/ferroelectric polymer), together with the excellent fatigue-free property, good thermal stability, and high efficiency, is realized in pulsed laser deposited (Bi1/2Na1/2)(0.9118)La0.02Ba0.0582(Ti0.97Zr0.03)O-3 (BNLBTZ) epitaxial lead-free relaxor thin films with the coexistence of ferroelectric (FE) and antiferroelectric (AFE) phases. This is endowed by high epitaxial quality, great relaxor dispersion, and the coexistence of the FE/AFE phases near the morphotropic phase boundary. The giant energy storage effect of the BNLBTZ lead-free relaxor thin films may make a great impact on the modern energy storage technology.
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