Journal
ADVANCED OPTICAL MATERIALS
Volume 6, Issue 19, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adom.201800351
Keywords
optoelectronic devices; photodetectors; p-n junctions; polarimeters; titanium trisulfide; trichalcogenides
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Funding
- EU Graphene Flagship [Core2 785219]
- European Research Council (ERC) under the European Union's Horizon 2020 research and innovation program [755655]
- Netherlands Organisation for Scientific Research (NWO) through the research program Rubicon [680-50-1515]
- MINECO [FIS2015-67367-C2-1-P]
- China Scholarship Council [201506120102]
- MINECO-FEDER [MAT2015-65203-R]
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The capability to detect the polarization state of light is crucial in many day-life applications and scientific disciplines. Novel anisotropic 2D materials such as TiS3 combine polarization sensitivity, given by the in-plane optical anisotropy, with excellent electrical properties. Here, the fabrication of a monolithic polarization-sensitive broadband photodetector based on a mixed-dimensionality TiS3/Si p-n junction is demonstrated. The fabricated devices show broadband responsivity up to 1050 nm, a strong sensitivity to linearly polarized illumination with difference between the two orthogonal polarization states up to 350%, and a good detectivity and fast response time. The discussed devices can be used as building blocks to fabricate more complex polarization-sensitive systems such as polarimeters.
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