Journal
ADVANCED OPTICAL MATERIALS
Volume 2, Issue 3, Pages 267-274Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adom.201300435
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Funding
- Korea Science and Engineering Foundations (KOSEF)
- National Research Foundation of Korea
- Ministry of Education, Science and Technology [20120005637, 20120006644]
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Recently, achieving flexible and highly efficient light-emitting elements is the most noticeable demand for lighting or displays. Here, fully flexible gallium nitride (GaN) light-emitting diodes (LEDs) are demonstrated based on a unique transfer method. The LED structure consisting of GaN pyramid arrays are first fabricated on an amorphous glass-based template with a low-temperature gallium nitride/titanium (LT-GaN/Ti) hetero-interface, then released and embedded into a flexible or stretchable substrate using a specialized interface control. Nanovoids created during thermal annealing render the hetero-interface weaker than the other interfaces. This interface is further weakened by a post-mechanical treatment for gentle release of the GaN pyramid arrays from the interface during a transfer process. The LEDs typically have a total thickness of }70 lambda m and exhibit stable surface-emitting electroluminescence even at a bending radius of}2 mm with exceptionally high luminance values of 595 and 175 cd/m(2) at peak wavelengths of 514 and 483 nm, respectively. The results suggest a route to high brightness, large, flexible/stretchable blue or green lighting or displays.
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