Journal
2D MATERIALS
Volume 2, Issue 1, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/2053-1583/2/1/014006
Keywords
graphene; chemical vapour deposition; single crystal
Categories
Funding
- Ministero dell'Universita, dell'Istruzione e della ricerca [PRIN 20105ZZTSE_003]
- European Union [604391]
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In this work we present a simple pathway to obtain large single-crystal graphene on copper (Cu) foils with high growth rates using a commercially available cold-wall chemical vapour deposition (CVD) reactor. We show that graphene nucleation density is drastically reduced and crystal growth is accelerated when: (i) using ex situ oxidized foils; (ii) performing annealing in an inert atmosphere prior to growth; (iii) enclosing the foils to lower the precursor impingement flux during growth. Growth rates as high as 14.7 and 17.5 mu m min(-1) are obtained on flat and folded foils, respectively. Thus, single-crystal grains with lateral size of about 1 mm can be obtained in just 1 h. The samples are characterized by optical microscopy, scanning electron microscopy, x-ray photoelectron spectroscopy, Raman spectroscopy as well as selected area electron diffraction and low-energy electron diffraction, which confirm the high quality and homogeneity of the films. The development of a process for the quick production of large grain graphene in a commonly used commercial CVD reactor is a significant step towards an increased accessibility to millimetre-sized graphene crystals.
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