Journal
PHYSICAL REVIEW APPLIED
Volume 3, Issue 3, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevApplied.3.034009
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Funding
- Nanoelectronics Research Initiative (NRI) through the Institute for Nanoelectronics Discovery and Exploration (INDEX)
- National Science Foundation [DMR-1307056, DMR-1229195]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1307056] Funding Source: National Science Foundation
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We obtain robust perpendicular magnetic anisotropy in a beta-W/Co40Fe40B20/MgO structure without the need of any insertion layer between W and Co40Fe40B20. This is achieved within a broad range of W thicknesses ( 3.0-9.0 nm), using a simple fabrication technique. We determine the spin Hall angle (0.40) and spin-diffusion length for the bulk beta form of tungsten with a large spin-orbit coupling. As a result of the giant spin Hall effect in beta-W and careful magnetic annealing, we significantly reduce the critical current density for the spin-transfer-torque-induced magnetic switching in Co40Fe40B20. The elemental beta-W is a superior candidate for magnetic memory and spin-logic applications.
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