Journal
NANO-MICRO LETTERS
Volume 8, Issue 1, Pages 29-35Publisher
SHANGHAI JIAO TONG UNIV PRESS
DOI: 10.1007/s40820-015-0058-0
Keywords
InGaAs; Nanowire; Near-infrared; Photodetector
Funding
- NSF of China [61574054, 61505051, 11374092, 11204073, 61474040, 51302077]
- National Basic Research Program of China [2012CB932703]
- Hunan province science and technology plan [2014FJ2001, 2014GK3015, 2014TT1004]
- Hunan Provincial Natural Science Foundation of China [2015JJ3049]
- Aid program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province
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InGaAs is an important bandgap-variable ternary semiconductor which has wide applications in electronics and optoelectronics. In this work, single-crystal InGaAs nanowires were synthesized by a chemical vapor deposition method. Photoluminescence measurements indicate the InGaAs nanowires have strong light emission in near-infrared region. For the first time, photodetector based on as-grown InGaAs nanowires was also constructed. It shows good light response over a broad spectral range in infrared region with responsivity of 6.5 x 10(3) A W-1 and external quantum efficiency of 5.04 x 10(5) %. This photodetector may have potential applications in integrated optoelectronic devices and systems.
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