Journal
IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS
Volume 5, Issue 2, Pages 183-193Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JETCAS.2015.2426531
Keywords
Memristive device; memristor; nonvolatile memory; recent developments in resistive memory (ReRAM); resistive RAM
Categories
Funding
- MOST of Taiwan
- EOL of ITRI
- NDL
- TSMC's JDP
- University Shuttle Program
Ask authors/readers for more resources
Memristive devices have shown considerable promise for on-chip nonvolatile memory and computing circuits in energy-efficient systems. However, this technology is limited with regard to speed, power, VDDmin, and yield due to process variation in transistors and memrisitive devices as well as the issue of read disturbance. This paper examines trends in the design of device and circuits for on-chip nonvolatile memory using memristive devices as well as the challenges faced by researchers in its further development. Several silicon-verified examples of circuitry are reviewed in this paper, including those aimed at high-speed, area-efficient, and low-voltage applications.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available