4.4 Article

Ti2MnZ (Z=Al, Ga, In) compounds: Nearly spin gapless semiconductors

Related references

Note: Only part of the references are listed.
Article Physics, Applied

Search for spin gapless semiconductors: The case of inverse Heusler compounds

S. Skaftouros et al.

APPLIED PHYSICS LETTERS (2013)

Article Physics, Multidisciplinary

A new spin gapless semiconductors family: Quaternary Heusler compounds

G. Z. Xu et al.

Article Physics, Multidisciplinary

Realization of Spin Gapless Semiconductors: The Heusler Compound Mn2CoAl

Siham Ouardi et al.

PHYSICAL REVIEW LETTERS (2013)

Review Materials Science, Multidisciplinary

Zero-gap materials for future spintronics, electronics and optics

Xiao-Lin Wang et al.

NPG ASIA MATERIALS (2010)

Article Chemistry, Multidisciplinary

Colossal Electroresistance and Giant Magnetoresistance in Doped PbPdO2 Thin Films

Xiaolin Wang et al.

ADVANCED MATERIALS (2009)

Article Physics, Applied

Achieving high Curie temperature in (Ga, Mn)As

M. Wang et al.

APPLIED PHYSICS LETTERS (2008)

Article Materials Science, Multidisciplinary

Mn(2)CoZ (Z=Al,Ga,In,Si,Ge,Sn,Sb) compounds: Structural, electronic, and magnetic properties

G. D. Liu et al.

PHYSICAL REVIEW B (2008)

Article Physics, Multidisciplinary

Proposal for a new class of materials: Spin gapless semiconductors

X. L. Wang

PHYSICAL REVIEW LETTERS (2008)

Article Physics, Condensed Matter

Defects-driven appearance of half-metallic ferrimagnetism in Co-Mn-based Heusler alloys

K. Ozdogan et al.

SOLID STATE COMMUNICATIONS (2007)

Article Multidisciplinary Sciences

Electric field effect in atomically thin carbon films

KS Novoselov et al.

SCIENCE (2004)

Article Materials Science, Multidisciplinary

Slater-Pauling behavior and origin of the half-metallicity of the full-Heusler alloys

I Galanakis et al.

PHYSICAL REVIEW B (2002)

Article Physics, Condensed Matter

First-principles simulation: ideas, illustrations and the CASTEP code

MD Segall et al.

JOURNAL OF PHYSICS-CONDENSED MATTER (2002)