4.4 Article

Ti2MnZ (Z=Al, Ga, In) compounds: Nearly spin gapless semiconductors

Journal

AIP ADVANCES
Volume 4, Issue 4, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.4871403

Keywords

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Funding

  1. National Natural Science Foundation of China [51271071]
  2. The Ministry of Education Program for New Century Excellent Talents [NCET-10-0126]
  3. Key Basic Research Program of Applied Basic Research Program of Hebei Province [12965136D]
  4. Hebei Province Higher Education Science and Technology Research Foundation for Youth Scholars [Q2012008]

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Ti(2)MnZ (Z=Al, Ga, In) compounds with CuHg2Ti-type structure are predicted to have the different width of band gap in two spin channels and exhibit a nearly spin gapless semiconductivity. There are different origins of the band gap in spin-up and spin-down channels. The width of the band gap can be adjusted by changing the lattice parameter or doping congeners. These compounds are completely-compensated ferrimagnets with a zero magnetic moment. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

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