Improved value for the silicon free exciton binding energy

The free exciton binding energy is a key parameter in silicon material and device physics. In particular, it provides the necessary link between the energy threshold for valence to conduction band optical absorption and the bandgap determining electronic properties. The long accepted low temperature binding energy value of 14.7 +/- 0.4 meV is reassessed taking advantage of developments subsequent to its original determination, leading to the conclusion that this value is definitely an under-estimate. Using three largely independent experimental data sets, an improved low temperature value of 15.01 +/- 0.06 meV is deduced, in good agreement with the most comprehensive theoretical calculations to date. (c) 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.