Journal
AIP ADVANCES
Volume 2, Issue 4, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4769102
Keywords
-
Ask authors/readers for more resources
Highly strained InGaAs:Bi quantum wells (QWs) were grown on (001)-oriented GaAs substrates by molecular beam epitaxy (MBE). Photoluminescence (PL) reveals strong improvements in the optical properties evidenced by 10 times enhancement in PL intensity and extended emission wavelength up to 1.29 mu m when Bi is introduced to InGaAs/GaAs QWs. The improved optical quality results from the Bi surfactant effect as well as the Bi incorporation. Post growth thermal annealing shows that Bi atoms in InGaAs/GaAs QWs do not show good thermal stability at 650 degrees C and tend to diffuse out of the QWs resulting in large wavelength blue-shifts. Copyright 2012 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License. [http://dx.doi.org/10.1063/1.4769102]
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available