Journal
AIP ADVANCES
Volume 2, Issue 1, Pages -Publisher
AIP Publishing
DOI: 10.1063/1.3701267
Keywords
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Funding
- NSFC [61076114, 61106108]
- Shanghai Educational Develop Foundation [10CG04]
- SRFDP [20100071120027]
- Fundamental Research Funds for the Central Universities
- S&T Committee of Shanghai [1052070420]
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We proposed intercalation of hexagonal boron nitride (hBN) in multilayer graphene to improve its performance in ultra-scaled interconnects for integrated circuit. The effect of intercalated hBN layer in bilayer graphene is investigated using non-equilibrium Green's functions. We find the hBN intercalated bilayer graphene exhibit enhanced transport properties compared with pristine bilayer ones, and the improvement is attributed to suppression of interlayer scattering and good planar bonding condition of inbetween hBN layer. Based on these results, we proposed a via structure that not only benefits from suppressed interlayer scattering between multilayer graphene, but also sustains the unique electrical properties of graphene when many graphene layers are stacking together. The ideal current density across the structure can be as high as 4.6x10(9) A/cm(2) at 1V, which is very promising for the future high-performance interconnect. Copyright 2012 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License. [http://dx.doi.org/10.1063/1.3701267]
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