Related references
Note: Only part of the references are listed.Photoexcited carrier dynamics in AlInN/GaN heterostructures
V. Liuolia et al.
APPLIED PHYSICS LETTERS (2012)
High current-induced degradation of AlGaN ultraviolet light emitting diodes
A. Pinos et al.
JOURNAL OF APPLIED PHYSICS (2011)
Localization potentials in AlGaN epitaxial films studied by scanning near-field optical spectroscopy
A. Pinos et al.
JOURNAL OF APPLIED PHYSICS (2011)
Migration-enhanced metal-organic chemical vapor deposition of AlxIn1-xN/GaN heterostructures (x > 0.75) on c-plane sapphire
Daniel Billingsley et al.
JOURNAL OF CRYSTAL GROWTH (2011)
Stress-modulated composition in the vicinity of dislocations in nearly lattice matched AlxIn1-x N/GaN heterostructures: A possible explanation of defect insensitivity
Anas Mouti et al.
PHYSICAL REVIEW B (2011)
Indium segregation in AlInN/AlN/GaN heterostructures
A. Minj et al.
APPLIED PHYSICS LETTERS (2010)
Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy
V. Liuolia et al.
APPLIED PHYSICS LETTERS (2010)
Optical studies of degradation of AlGaN quantum well based deep ultraviolet light emitting diodes
A. Pinos et al.
JOURNAL OF APPLIED PHYSICS (2010)
Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN
E. Sakalauskas et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2010)
Time-resolved luminescence studies of proton-implanted GaN
A. Pinos et al.
APPLIED PHYSICS LETTERS (2009)
Influence of indium clustering on the band structure of semiconducting ternary and quaternary nitride alloys
I. Gorczyca et al.
PHYSICAL REVIEW B (2009)
Electro-optic nature of ultrafast pump-probe reflectivity response from multilayer semiconductor heterostructures
Y. D. Glinka et al.
JOURNAL OF APPLIED PHYSICS (2008)
Nanoscopic recombination processes in InGaN/GaN quantum wells emitting violet, blue, and green spectra
A. Kaneta et al.
PHYSICAL REVIEW B (2008)
Current status of AlInN layers lattice-matched to GaN for photonics and electronics
R. Butte et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2007)
Femtosecond pump-probe spectroscopy of propagating coherent acoustic phonons in InxGa1-xN/GaN heterostructures -: art. no. 195335
RL Liu et al.
PHYSICAL REVIEW B (2005)
Localized high-energy emissions from the vicinity of defects in high-efficiency GaxIn1-xN/GaN quantum wells -: art. no. 081309
F Hitzel et al.
PHYSICAL REVIEW B (2005)
Recombination dynamics of localized excitons in Al1-xInxN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy
T Onuma et al.
JOURNAL OF APPLIED PHYSICS (2003)
Be-doped low-temperature-grown GaAs material for optoelectronic switches
A Krotkus et al.
IEE PROCEEDINGS-OPTOELECTRONICS (2002)
Anomalous features in the optical properties of Al1-xInxN on GaN grown by metal organic vapor phase epitaxy
S Yamaguchi et al.
APPLIED PHYSICS LETTERS (2000)
Share Paper
