Journal
AIP ADVANCES
Volume 1, Issue 4, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3656241
Keywords
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Funding
- NSC in Taiwan [99-2120-M-006-004, 99-2911-I-006-504, 100-2221-E-006-169-MY3, 100-2120-M-006-001]
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We report on mechanisms for suppressing diamond secondary nucleation in microwave plasma self-bias-enhanced growth (SBEG) of diamond films in methane diluted by argon. High-density plasma at a small distance from the substrate induces a floating potential which promotes high-flux, low-energy ion bombardment on diamond growing surfaces along with an equal flux of electrons. Increased atomic hydrogen generated by electron impact dissociation of methane and low-energy ion bombardment help remove hydrocarbon coatings on diamond grains in favor of continuous grain growth and, therefore, the suppression of secondary diamond nucleation. Energetic meta-stable excited argon, abundant C2 dimers, and enhanced effective surface temperature due to low-energy ion bombardment further promote the diamond grain growth resulting in the deposition of a diamond film with columnar diamond grains of much larger grain sizes and a much lower density of grain boundaries than ultrananocrystalline diamond (UNCD) films grown under similar conditions without optimized plasma-substrate interactions. SEM, XRD, PL, and Raman scattering help confirm the deposition of diamond films with columnar grains. Copyright 2011 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License. [doi:10.1063/1.3656241]
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