Journal
AIP ADVANCES
Volume 1, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3591397
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Funding
- Deutsche Forschungsgemeinschaft (DFG) [SFB689]
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We report here on a local spin valve effect observed unambiguously in lateral all-semiconductor all-electrical spin injection devices, employing p(+)-(Ga,Mn)As/n(+)-GaAs Esaki diode structures as spin aligning contacts. We discuss the observed local spin-valve signal as a result of the interplay between spin-transport-related contribution and the tunneling anisotropic magnetoresistance of the magnetic contacts. The magnitude of the spin-related magnetoresistance change is equal to 30 Omega which is twice the magnitude of the measured non-local signal. Copyright 2011 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License. [doi:10.1063/1.3591397]
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