4.7 Article

Anomalous resistivity upturn in epitaxial L21-Co2MnAl films

Journal

SCIENTIFIC REPORTS
Volume 7, Issue -, Pages -

Publisher

NATURE PUBLISHING GROUP
DOI: 10.1038/srep42931

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Funding

  1. MOST of China [2015CB921503]
  2. NSFC [61334006]
  3. NSF MRSEC program [DMR-1120296]

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Despite of the great scientific and technology interest, highly ordered full-Heusler L2(1)-Co2MnAl films have remained a big challenge in terms of the availability and the electrical transport. Here we report the controllable growth and the intriguing transport behavior of epitaxial L2(1)-Co2MnAl films, which exhibit a low-temperature (T) resistivity upturn with a pronounced T-1/2 dependence, a robust independence of magnetic fields, and a close relevance to structural disorder. The resistivity upturn turns out to be qualitatively contradictory to weak localization, particle-particle channel electronelectron interaction (EEI), and orbital two-channel Kondo effect, leaving a three-dimensional particlehole channel EEI the most likely physical source. Our result highlights a considerable tunability of the structural and electronic disorder of magnetic films by varying growth temperature, affording unprecedented insights into the origin of the resistivity upturn.

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